Samsung Electronics today announced it has completed the specifications of the history’s first DDR4 DRAM memory development, and using 30nm-class process manufacturing the first batch of samples.

Today, DDR4 memory standards final decisions yet. This sample is UDIMM Samsung type, capacity of 2GB, operating voltage is only 1.2V, the operating frequency is 2133MHz, and with the new circuit architecture can reach a maximum 3200MHz.In contrast, DDR3 memory standard frequency maximum of only 1600MHz, operating voltage typically 1.5V, energy-saving version is also 1.35V. This alone, DDR4 memory can save up to 40%.

 , DDR4 memory may be as high as the highest frequency of 4266MHz, the voltage down to 1.1V is possible even 1.05V.

Samsung said this DDR4 memory using high-end memory particles appeared in the“Pseudo Open Drain” (a virtual open-drain) technology, reading, writing, when the data leakage rate of only half the DDR3 memory.

Samsung said last month has been a controller manufacturer to provide this sample DDR4 memory test, and plans to work closely with a number of memory manufacturers to help organizations in the JEDEC standards later this year to complete the formulation of DDR4 expected commercially in 2012.

Historically, Samsung in 1997, 2001, 2005, three were the first to create the first DDR, DDR2, DDR3 memory, and is now in the DDR4 continued to maintain a leading position.